unisonic technologies co., ltd 26N50 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-789.a 26 a , 500v n-channel power mosfet ? description the utc 26N50 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching per formance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 26N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. ? features * r ds(on) =0.24 ? @ v gs =10v * high switching speed * 100% avalanche tested ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 26N50l-t3p-t 26N50g-t3p-t to-3p g d s tube note: pin assignment: g: gate d: drain s: source
26N50 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-789.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v drain current continuous (t c =25c) i d 24(note 2) a pulsed (note 3) i dm 96 (note 2) a avalanche current (note 3) i ar 26 a avalanche energy single pulsed (note 4) e as 1100 mj repetitive (note 5) e ar 29 mj peak diode recovery dv/dt (note 5) dv/dt 15 v/ns power dissipation p d 290 w derate above 25c 2.33 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. drain current limited by maximum junction temperature 3. repetitive rating: pulse width lim ited by maximum junction temperature 4. l =3.4mh, i as = 26a, v dd = 50v, r g = 25 ? , starting t j = 25c 5. i sd 26a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 40 c/w junction to case jc 0.43 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v drain-source leakage current i dss v ds =500v, v gs =0v 50 a gate- source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =13a 0.15 0.24 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 3500 4500 pf output capacitance c oss 520 670 pf reverse transfer capacitance c rss 55 70 pf
26N50 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-789.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit switching parameters total gate charge q g v gs =10v, v ds =400v, i d =26a (note 1, 2) 90 120 nc gate to source charge q gs 23 nc gate to drain charge q gd 52 nc turn-on delay time t d ( on ) v dd =250v, i d =26a, r g =25 ? (note 1, 2) 80 170 ns rise time t r 250 500 ns turn-off delay time t d ( off ) 200 400 ns fall-time t f 155 320 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 24 a maximum body-diode pulsed current i sm 96a drain-source diode forward voltage v sd i s =26a, v gs =0v 1.4 v body diode reverse recovery time t r r i s =26a, v gs =0v, di f /dt=100a/s (note 1) 250 ns body diode reverse recovery charge q rr 1.1 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
26N50 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-789.a ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
26N50 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-789.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
26N50 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-789.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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